LS844 Series
Low Noise, Monolithic Dual N-Channel JFET Amplifier
LOW INPUT CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET
LSK489 TO-71 6L
FEATURES
LSK489 TO-71 6L
G1
S2
Ultra-Low Noise
en=2.5nV/Hz @1kHz TYP.
Low Leakage
IG=15pA TYPs.
Low Drift
I VGS1-2/TI=5µV/ºC max.
Ultra-Low Offset Voltage
IVGS1-2I=1mV max.
ABSOLUTE MAXIMUM RATINGS
4
D2 5
4
2 D1
6
3
D2 5
1
G2
G1
S2
3
2 D1
6
S1
G2
1
S1
1
TO-71 6L
Top View
@ 25°C (unless otherwise noted)
TO-78 6L
Top View
Maximum Temperatures
Storage Temperature
-55º to +150°C
Operating Junction Temperature
-55º to +150°C
Maximum Voltage and Current for Each Transistor1
-VGSS
Gate Voltage to Drain or Source 60V
IG(f)
Gate Forward Current
50mA
Maximum Power Dissipation2
Device Dissipation2 @ Free Air - Total
400mW TA=+25°C
SOIC-A 8L
Top View
SOT-23 6L
Top View
PDIP 8L
Top View
* For equivalent single version, see LSK189
Features
Benefits
Applications
• Low Noise: en = 2.5nV/√Hz (typ),
f = 1kHz, NBW = 1Hz
• Very Low Common Source Input
Capacitance of CISS = 3pF – typ and
8pF- max
• High Slew Rate
• Low Offset/Drift Voltage
• Low Gate Leakage IGSS and IG
• High CMRR 102 dB
• Tight Differential Voltage Match vs. Current
• Improved Op Amp Speed Settling Time
Accuracy
• Minimum Input Error Trimming Error Voltage
• Lower Intermodulation Distortion
• Wideband Differential Amplifiers
• High Speed Temperature
Compensated Single Ended Input
Amplifier Amps
• High Speed Comparators
• Impedance Converters
• Sonobouys and Hydrophones
• Acoustic Sensors
Description
The LS844 Series is the industry’s lowest input capacitance and
low-noise monolithic dual N-Channel JFET. Low input
capacitance substantially reduces intermodulation distortion. In
addition, these dual JFETs feature tight offset voltage and low
drift over temperature range, and are targeted for use in a wide
range of precision instrumentation and sensor applications.
The LS844 Series is available in surface mount plastic SOIC 8L,
PDIP 8L and SOT-23 6L packages. Additionally, it is offered in
thru-hole metal cans; the TO-71 6L and TO-78 6L package.
The LS844 Series provides an increase in capabilities for a wide
range of low-noise applications.
The most significant aspect of the LS844 Series is how it
combines a noise level comparable with the LSK389 while having
much lower gate-to-drain capacitance, 4pF versus the 25pF. The
slightly higher noise of the LS844 Series, versus the LSK389, is
not significant in most instances, while the much lower
capacitance enables designers to produce simpler, more elegant
circuit designs with fewer devices that cost less in production.
Like the Linear Systems LSK389, the LS844 Series features a
For an equivalent single N-Channel version refer to the LSK189
datasheet. LS844 Series TO-71 6L and SOIC 8L are fit, form and unique design construction of interleaving both JFETs on the same
piece of silicon to provide excellent matching and thermal tracking,
pin compatible to the same LSK389 product.
as well a low-noise profile having nearly zero popcorn noise.
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
www.linearsystems.com
Page | 1
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
Electrical Characteristics @ 25ºC (unless otherwise noted)
SYMBOL
CHARACTERISTIC
I VGS1-2 / TI max.
Drift vs. Temperature
5
10
25
µV/ºC
IVGS1-2I max.
Offset Voltage
1
5
15
mV
CHARACTERISTIC
MIN.
TYP.
BVGSS
Breakdown Voltage
-60
--
--
V
VDS= 0
ID= -1nA
BVGGO
Gate-to-Gate Breakdown
±60
--
--
V
IGGO= ±1µA
ID= 0
IS= 0
Gfss
TRANSCONDUCTANCE
Full Conduction
1500
--
--
µS
VDS= 15V
VGS= 0
f = 1kHz
Gfs
Typical Conduction
1000
1500
--
µS
│Gfs1-2/Gfs1│
Mismatch
--
0.6
3
%
VDS= 15V
ID= 500µA
IDSS
DRAIN CURRENT
Full Conduction
1.5
5
15
mA
│IDSS1-2/IDSS│
Mismatch at Full Conduction
--
1
5
%
VDS= 15V
VGS= 0
VGS(off)
GATE VOLTAGE
Pinchoff Voltage
-1
--
-3.5
V
VDS= 15V
ID= 1nA
VGS
Operating Range
-0.5
--
-3.5
V
VDS= 15V
ID= 500µA
-IG
GATE CURRENT
Operating
--
15
50
pA
VDG= 15V
ID= 500µA
-IG
High Temperature
--
--
50
nA
VDG= 15V
ID= 500µA TA=+125ºC
-IG
Reduced VDG
--
5
30
pA
VDG= 3V
ID= 500µA
-IGSS
At Full Conduction
--
--
100
pA
VGS= 15V
VGS= 0
GOSS
OUTPUT CONDUCTANCE
Full Conduction
--
--
40
µS
VDS= 15V
VGS= 0
GOS
│GOS 1-2│
Operating
Differential
--
2.0
2.7
µS
--
0.02
0.2
µS
VDS= 15V
ID= 200µA
SYMBOL
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
LS843 LS844 LS845 UNITS
MAX. UNITS
www.linearsystems.com
CONDITIONS
VDG= 10V
ID= 500µA
TA= -55ºC to +125ºC
VGS= 10V
ID= 500µA
CONDITIONS
Page | 2
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
SYMBOL
CHARACTERISTIC
MIN.
TYP.
MAX. UNITS
CONDITIONS
90
100
--
dB
VDS= 10 to 20V
--
85
--
dB
VDS= 5 to 10V
COMMON MODE REJECTION
CMRR
CMRR
-20 log │∆V GS1-2/ ∆V DS│
en
Voltage
--
--
3.0
nV/Hz
en
Voltage
--
--
7.0
nV/Hz
Input
--
--
8
pF
CRSS
Reverse Transfer
--
--
3
pF
CDD
Drain-to-Drain
--
0.5
--
pF
CISS
VDS= 15V
ID= 500µA
ID= 500µA
ID= 2.0mA f= 1kHz
NBW= 1Hz
VDS= 15V
ID= 2.0mA f= 10Hz
NBW= 1Hz
CAPACITANCE
VDS= 15V
ID= 500µA f= 1mHz
VDD= 15V
ID= 500µA f= 1mHz
Notes:
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Pulse width ≤2ms.
3. All MIN/TYP/MAX Limits are absolute values. Negative signs indicate electrical polarity only.
4. Derate 2.4 mW/°C above 25°C.
5. Derate 4 mW/°C above 25°C.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is
assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license
is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
www.linearsystems.com
Page | 3
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
Typical Characteristics
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
www.linearsystems.com
Page | 4
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
Typical Characteristics Continued
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
www.linearsystems.com
Page | 5
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
Typical Characteristics Continued
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
www.linearsystems.com
Page | 6
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
Typical Characteristics Continued
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
www.linearsystems.com
Page | 7
LS844 Series
Low Noise, Low Capacitance, Monolithic Dual N-Channel JFET Amplifier
Package Dimensions:
TO-71
6 Lead
PDIP
8 Lead
TO-78
6 Lead
SOT-23
SOT-23
6 Lead
0.95
1.90
SOIC
8 Lead
1
6
2
5
3
4
0.35
0.50
2.80
3.00
1.50
1.75
2.60
3.00
0.90
1.30
0.09
0.20
BOTTOM
VIEW
0.10
0.60
0.00
0.15
BOTTOM
VIEW
DIMENSIONS IN
MILLIMETERS
*All DIMENSIONS IN INCHES EXCEPT FOR THE SOT-23 6L PACKAGE,
WHICH IS IN MILLIMETERS
Ordering Information:
Standard Part Call-Out
LS843 TO-71 6L RoHS
LS844 TO-71 6L RoHS
LS845 TO-71 6L RoHS
LS843 TO-78 6L RoHS
LS844 TO-78 6L RoHS
LS845 TO-78 6L RoHS
LS843 SOT-23 6L RoHS
LS844 SOT-23 6L RoHS
LS845 SOT-23 6L RoHS
LS843 SOIC 8L RoHS
LS844 SOIC 8L RoHS
LS845 SOIC 8L RoHS
LS843 PDIP 8L RoHS
LS844 PDIP 8L RoHS
LS845 PDIP 8L RoHS
Custom Part Call-Out (Custom Parts Include SEL + 4 Digit Numeric Code)
LS843 TO-71 6L RoHS SELXXXX
LS844 TO-71 6L RoHS SELXXXX
LS845 TO-71 6L RoHS SELXXXX
LS843 TO-78 6L RoHS SELXXXX
LS844 TO-78 6L RoHS SELXXXX
LS845 TO-78 6L RoHS SELXXXX
LS843 SOT-23 6L RoHS SELXXXX
LS844 SOT-23 6L RoHS SELXXXX
LS845 SOT-23 6L RoHS SELXXXX
LS843 SOIC 8L RoHS SELXXXX
LS844 SOIC 8L RoHS SELXXXX
LS845 SOIC 8L RoHS SELXXXX
LS843 PDIP 8L RoHS SELXXXX
LS844 PDIP 8L RoHS SELXXXX
LS845 PDIP 8L RoHS SELXXXX
Doc 201144 05/13/2022 Rev# A16 ECN# LS844 Series
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Page | 8
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